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The AOTF15B65M2 is a 650V, 15A AlphaIGBT with an integrated anti-parallel diode in a TO-220F package. It features a collector-emitter saturation voltage of 1.7V at 25°C and 2.03V at 125°C. The device has a maximum junction temperature of 150°C and short-circuit withstand time of 5µs. Thermal resistance from junction to case is 3.5°C/W for the IGBT and 3.7°C/W for the diode. Total gate charge is 32nC, and reverse recovery time is 298ns at 25°C.
Verify the specific ordering suffix matches the required package variant. Confirm thermal management requirements align with the specified junction-to-case resistance values. Ensure the application does not involve life support systems where liability is excluded. Check for any recent product specification changes or updates before finalizing procurement plans.
Select this component for hard switching applications requiring high efficiency and low switching losses. Consider the 650V breakdown voltage and 15A continuous current rating for appropriate load matching. Evaluate thermal performance based on the 3.5°C/W junction-to-case resistance for heat sink design. Verify compatibility with standard TO-220F mounting constraints.
This part belongs to the AlphaIGBT series from Alpha & Omega Semiconductor. It utilizes advanced IGBT technology to achieve low saturation voltage and fast switching characteristics. The integration of a soft recovery diode enhances overall system performance in inductive load applications.
Check datasheets for alternative 650V, 15A IGBTs in TO-220F packages. Verify pinout compatibility and thermal resistance specifications. Ensure switching energy and reverse recovery parameters meet or exceed original design requirements.