AOTF15S60L

$2.97

Description：MOSFET N-CH 600V 15A TO220-3F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:c6c2ef0745b4 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF15S60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 15A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF15S60L

Description：MOSFET N-CH 600V 15A TO220-3F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：290mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15.6 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：717 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：27.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF15S60L

AOTF15S60L

Single FETs, MOSFETs Overview

The AOTF15S60L is a surface-mount N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOSTM high voltage process. It features a drain-source voltage of 600V and a continuous drain current of 15A at 25°C case temperature. The device offers a maximum on-resistance of 0.29Ω at 10V gate drive and a typical total gate charge of 16nC. It includes guaranteed avalanche capability with single pulsed energy up to 208mJ and repetitive energy up to 27.8mJ. Packaged in TO-263 (D2PAK), it supports junction temperatures up to 150°C.

Single FETs, MOSFETs Feature Summary

Fabricated using advanced aMOSTM high voltage process for robust switching performance
Guaranteed avalanche capability with 100% UIS testing
Optimized low RDS(on) and Qg for efficient offline power supply designs
High dv/dt ruggedness with peak diode recovery characteristics

Single FETs, MOSFETs Applications

Offline power supply designs
Switching applications requiring high robustness
Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'L' against the manufacturer's official documentation to confirm package type and electrical tolerances. Confirm RoHS compliance status and check for any recent Product Change Notices (PCN) regarding manufacturing location or material composition changes before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a TO-263 packaged N-channel MOSFET with 600V rating. Ensure thermal management accounts for the 4.5°C/W junction-to-case resistance. Verify that the application's peak drain current does not exceed the 63A pulsed limit and that avalanche energy requirements fall within the specified 208mJ single pulse rating.

Single FETs, MOSFETs Part Context

This part belongs to the AOT15S60L/AOB15S60L/AOTF15S60L family sharing identical electrical specifications. The 'F' suffix denotes the TO-263 (D2PAK) surface-mount package variant. It is distinct from through-hole versions like AOT15S60L which use different thermal profiles despite matching electrical parameters.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include AOT15S60 (through-hole equivalent). Cross-referencing with other manufacturers requires verifying matching VDS, ID, RDS(on), and package dimensions.