AOTF20S60L

$3.59

Description：MOSFET N-CH 600V 20A TO220-3F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:d6897aa54115 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF20S60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 20A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF20S60L

Description：MOSFET N-CH 600V 20A TO220-3F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.8 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1038 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：37.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF20S60L

AOTF20S60L

Single FETs, MOSFETs Overview

The AOTF20S60L is a through-hole N-channel MOSFET from Alpha & Omega Semiconductor, utilizing the advanced aMOSTM high voltage process. It features a drain-source breakdown voltage of 650V and a continuous drain current of 20A at 25°C case temperature. The device offers a maximum on-resistance of 0.199Ω at VGS=10V and ID=10A. Key electrical parameters include a typical gate charge of 19.8nC and an effective output capacitance energy (Eoss) of 4.9µJ at 400V. It supports a peak pulsed drain current of 80A and includes guaranteed avalanche capability with 100% UIS testing.

Single FETs, MOSFETs Feature Summary

Fabricated using the advanced aMOSTM high voltage process for robust switching performance.
Features low on-resistance and gate charge to facilitate rapid adoption in power supply designs.
Includes guaranteed avalanche capability verified by 100% Unclamped Inductive Switching (UIS) testing.

Single FETs, MOSFETs Applications

Offline power supply designs
Switching applications requiring high voltage robustness

Single FETs, MOSFETs Procurement Notes

Verify the component status as it may be marked as not recommended for new designs. Confirm the specific package variant matches the TO-220 footprint requirements. Ensure compliance with export control rules and applicable legal requirements before procurement. Evaluate product suitability for the intended application independently.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a 650V N-channel MOSFET with guaranteed avalanche ruggedness. The TO-220 package suits through-hole mounting needs. Consider the 0.199Ω RDS(on) and 19.8nC Qg values for efficiency calculations. Verify thermal management capabilities against the specified junction-to-case resistance.

Single FETs, MOSFETs Part Context

This part belongs to the AOTF20S60 series, which shares specifications with the AOT20S60L, AOB20S60L, and AOTF20S60 variants. These devices are manufactured using Alpha & Omega Semiconductor's proprietary aMOSTM technology. The series targets offline power supply applications where reliability and switching performance are critical.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include AOT20S60L, AOB20S60L, and AOTF20S60. Cross-manufacturer replacements require matching the 650V rating, 20A current capacity, and TO-220 package dimensions.