AOTF2610L

$0.49

Description：MOSFET N-CH 60V 9A/35A TO220-3F
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:0d4e90efe133 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF2610L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 9A/35A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF2610L

Description：MOSFET N-CH 60V 9A/35A TO220-3F
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2007 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 31W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF2610L

AOTF2610L

Single FETs, MOSFETs Overview

The AOTF2610L is a 60V N-Channel MOSFET utilizing trench technology optimized for high-frequency switching. It features an extremely low combination of RDS(ON), Ciss, and Coss to minimize conduction and switching losses. The device is rated for a continuous drain current of 35A at TC=100°C and a pulsed drain current of 140A. Static on-resistance is less than 10.7mΩ at VGS=10V and 13.5mΩ at VGS=4.5V. Thermal resistance from junction to case is 4.8°C/W, with a maximum junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

Optimized trench MOSFET technology designed for efficient high-frequency switching performance.
Minimized power losses through an extremely low combination of on-resistance and capacitance values.
Validated reliability through 100% testing for Unclamped Inductive Switching (UIS) capability and gate resistance.

Single FETs, MOSFETs Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required; the 'F' suffix indicates the TO-220F plastic encapsulated package. Confirm that the application design accommodates the thermal characteristics provided in the datasheet, specifically the junction-to-case resistance of 4.8°C/W. Ensure the operating voltage does not exceed the 60V drain-source breakdown rating. Evaluate suitability for intended applications as the manufacturer assumes no liability for life support systems.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-Channel MOSFET is required for synchronous rectification or boost conversion applications. The TO-220F package is suitable for through-hole mounting where higher thermal dissipation is needed compared to surface-mount options. Consider the 175°C maximum junction temperature rating for high-temperature environments. Verify that the gate drive voltage supports the specified RDS(ON) thresholds at either 10V or 4.5V.

Single FETs, MOSFETs Part Context

This part belongs to the AOT2610L family, which includes the AOT2610L (TO-220 package) and AOTF2610L (TO-220F package). Both variants share identical electrical specifications but differ in physical packaging. The device is manufactured by Alpha & Omega Semiconductor Inc. and utilizes advanced trench MOSFET technology to achieve low on-resistance and fast switching speeds.