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AOTF360A70L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 700V 12A TO220F. Review the specifications below when checking this part for your BOM.
The AOTF360A70L is a 700V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source breakdown voltage of 800V and a continuous pulsed drain current of 48A. The device exhibits a maximum on-resistance of 0.36Ω at VGS=10V and ID=6A, with a total gate charge of 22.5nC. Designed for TO-220F packages, it supports junction temperatures up to 150°C and includes an enhanced body diode for robust reverse recovery performance.
Verify the specific package variant required, as the AOTF360A70L designation corresponds to the TO-220F form factor within the AOT(B)360A70L family. Confirm that the application environment remains within the specified thermal limits and that the component is evaluated for suitability regarding intended use cases and legal requirements.
Select this component when designing circuits requiring a 700V rating with low conduction losses and improved electromagnetic interference profiles. The enhanced body diode makes it suitable for topologies involving hard commutation or abnormal operational transients where robust reverse recovery behavior is critical for system reliability.
This part belongs to the Alpha & Omega Semiconductor aMOS5 series, which targets high-efficiency and high-density power applications. The series is designed to meet the demands of server, workstation, and industrial power systems, offering a balance of low on-resistance and optimized switching speeds for mission-critical environments.
Compatible alternatives include the AOT360A70L (TO-220) and AOB360A70L (TO-263/D2PAK). Ensure mechanical footprint compatibility and verify that thermal resistance values align with the heatsinking strategy of the target design.
The absolute maximum drain-source breakdown voltage is rated at 800V.
The device features an enhanced body diode designed for robustness and fast reverse recovery, handling peak reverse recovery currents up to 24.5A.
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