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AOTF380A60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 11A TO220F. Review the specifications below when checking this part for your BOM.
The AOTF380A60L is a through-hole N-channel power MOSFET from the aMOS5 series by Alpha & Omega Semiconductor. It features a drain-source voltage (VDS) of 600 V and a maximum continuous drain current (ID) of 11 A at case temperature. The device has a maximum on-resistance (RDS(on)) of 0.38 Ω at VGS=10V and ID=5.5A. Key dynamic parameters include a total gate charge (Qg) of 18 nC, input capacitance (Ciss) of 955 pF, and body diode reverse recovery time (trr) of 251 ns. It operates within a junction temperature range of -55°C to 150°C.
Verify component authenticity upon receipt as datasheet revision history indicates multiple subcontractor changes and assembly site updates. Confirm RoHS3 compliance status matches specific manufacturing lot requirements. Ensure ordering suffixes align with requested packaging formats, noting that standard tube packaging may differ from alternative reel options.
Select this component when a 600V rating is required for high-side or low-side switching in medium-power topologies. The 11A continuous current capability suits applications where moderate load currents are expected without excessive heatsinking. Consider the 0.38 ohm RDS(on) for efficiency calculations under typical operating conditions.
This part belongs to the AOTF380 family, sharing electrical specifications with surface-mount variants like AOB380A60L and leaded TO-220 versions. The 'F' suffix typically denotes a specific lead form or insulation characteristic within the TO-220 family, distinguishing it from standard TO-220 packages.
Direct pin-compatible replacements within the same manufacturer's portfolio include AOT380A60L and AOB380A60L, which share identical electrical ratings but differ in package type.
The maximum pulsed drain current (IDM) is rated at 44 A, limited by the junction temperature.
Yes, the device includes an intrinsic body diode with a forward voltage (VSD) of approximately 1.2 V at 5.5 A and a reverse recovery time of 251 ns.
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