AOTF4N60

$0.35

Description：MOSFET N-CH 600V 4A TO220-3F
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:6a931d786b2a Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF4N60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 4A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF4N60

Description：MOSFET N-CH 600V 4A TO220-3F
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：2.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：615 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF4N60

AOTF4N60

Single FETs, MOSFETs Overview

The AOTF4N60 is a single N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a 600V drain-source voltage rating and supports a continuous drain current of 4A at case temperature. The device utilizes a TO-220F package for through-hole mounting. Key electrical parameters include a maximum gate-source voltage of ±30V, a threshold voltage of 4.5V at 250µA, and a maximum gate charge of 12nC at 10V. The input capacitance is specified as 370pF at 25V. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

High-voltage N-channel conduction capability for power switching applications
Through-hole TO-220F package design for robust mechanical mounting
Optimized gate charge characteristics for efficient drive requirements

Single FETs, MOSFETs Applications

General-purpose power switching circuits
DC-DC converter topologies
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation (e.g., L) against the required datasheet revision, as variants may exist within the product family. Confirm that the TO-220F package dimensions match the target PCB footprint. Ensure the procurement source provides valid traceability documentation for this discrete semiconductor component. Check for any updated environmental compliance declarations if required by the end-use industry standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V blocking voltage and moderate current handling are required in a through-hole configuration. Compare the on-resistance and thermal dissipation capabilities against alternative packages if space constraints allow surface-mount options. Evaluate the gate charge specifications relative to the driving circuit's output current capability to ensure adequate switching speeds without excessive driver stress.

Single FETs, MOSFETs Part Context

This part belongs to the AOS single N-channel MOSFET portfolio, designed for medium-power applications. It shares the standard pinout and basic electrical architecture with other devices in the series, such as the AOT3N60 and AOTF10N60, differentiated primarily by current ratings and specific package variations like the TO-220F form factor.