AOTF66613L

$1.16

Description：MOSFET N-CH 60V 44.5A/90A TO220F
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:a6da6f8079ba Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOTF66613L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 44.5A/90A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF66613L

Description：MOSFET N-CH 60V 44.5A/90A TO220F
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：44.5A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：110 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5300 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：8.3W (Ta), 34.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF66613L

AOTF66613L

Single FETs, MOSFETs Overview

The AOTF66613L is a 60V N-Channel MOSFET utilizing AlphaSGT™ trench technology in a TO-220F package. It features a maximum drain-source voltage of 60V and continuous drain currents of 44.5A at ambient temperature and 90A at case temperature. The device offers low on-resistance, specified as less than 2.5mΩ at VGS=10V and less than 3.0mΩ at VGS=8V. Key electrical parameters include a gate threshold voltage range of 2.3V to 3.5V, a maximum total gate charge of 110nC at 10V, and a maximum junction-to-case thermal resistance of 3.6°C/W.

Single FETs, MOSFETs Feature Summary

Incorporates AlphaSGT™ trench technology for optimized performance
Features low RDS(ON) combined with excellent gate charge characteristics
Subjected to 100% testing for Unclamped Inductive Switching (UIS) capability
Includes 100% gate resistance verification during manufacturing

Single FETs, MOSFETs Applications

High frequency switching circuits
Synchronous rectification systems
Brushless DC (BLDC) motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'L' against the manufacturer's current documentation to confirm packaging details and compliance status. Ensure that the selected component matches the required thermal management specifications for the intended application environment. Confirm RoHS and halogen-free compliance requirements align with project standards before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component based on its 60V rating and low on-resistance profile suitable for efficient power conversion. Consider the TO-220F package for through-hole mounting and adequate heat dissipation capabilities. Evaluate the gate charge requirements against the driving circuitry to ensure optimal switching speeds and minimize power losses during operation.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaSGT™ series of N-Channel MOSFETs from Alpha & Omega Semiconductor. It is designed for general-purpose power switching applications requiring robust performance and reliability. The TO-220F form factor provides a balance between current handling capacity and ease of integration into standard PCB layouts.