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AOTF66616L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 38A/72.5A TO220F. Review the specifications below when checking this part for your BOM.
The AOTF66616L is a 60V N-Channel Power MOSFET utilizing AlphaSGT™ technology in a TO-220F package. It features a maximum drain-source voltage of 60V and continuous drain current ratings of 72.5A at case temperature of 25°C, decreasing to 30A at 100°C. The device offers low on-resistance of less than 3.3mΩ at VGS=10V and 4.7mΩ at VGS=6V. Key electrical parameters include a gate threshold voltage range of 2.4V to 3.4V, total gate charge of 60nC at 10V, and input capacitance of 2870pF. Thermal resistance from junction to case is 4.1°C/W, with a maximum operating junction temperature of 150°C.
Verify the specific ordering suffix and package form factor against the manufacturer's official documentation before procurement. Confirm that the component meets RoHS and Halogen-Free compliance requirements as specified in the datasheet. Ensure the selected part number matches the required thermal and electrical specifications for the target application environment.
Select this component based on its 60V rating and high current handling capabilities suitable for power conversion stages. Consider the thermal resistance values when designing heatsinking solutions for synchronous rectification or motor drive circuits. Evaluate the gate charge and threshold voltage characteristics to ensure compatibility with the intended driver circuitry for optimal switching efficiency.
This component belongs to the AlphaSGT™ series of power MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It is designed for high-efficiency power switching applications requiring low conduction losses and robust avalanche energy handling. The TO-220F package facilitates through-hole mounting for industrial and motor drive environments.
Consult official substitution lists for verified alternatives. Cross-reference key parameters such as VDS, ID, RDS(ON), and package type when evaluating potential replacements to ensure functional equivalence in the target circuit design.
Yes, the datasheet confirms that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.
The maximum junction-to-case thermal resistance (RθJC) is 4.1°C/W.
Yes, the applications section explicitly lists synchronous rectification in DC/DC and AC/DC converters.
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