AOTF66920L

Single FETs, MOSFETs Overview

The AOTF66920L is a 100V N-Channel Power MOSFET utilizing AlphaSGT™ trench technology in a TO-220F package. It features a maximum drain-source voltage of 100V and continuous drain currents of 41A at 25°C case temperature or 22.5A at 25°C ambient temperature. The device offers a low on-resistance of less than 8.2mΩ at VGS=10V and 10.7mΩ at VGS=4.5V, supporting logic-level driving. Key electrical parameters include a gate charge of 50nC at 10V, an input capacitance of 2500pF, and a power dissipation rating of 8.3W at 25°C ambient or 100W at 25°C case temperature.

Single FETs, MOSFETs Feature Summary

• Employs AlphaSGT™ trench technology to achieve low on-resistance and excellent figure of merit.
• Supports logic-level driving with optimized gate threshold characteristics for efficient control.
• Features 100% unclamped inductive switching (UIS) testing for enhanced ruggedness.
• Designed for high-frequency switching applications with fast switching times.

Single FETs, MOSFETs Applications

• High frequency switching circuits
• Synchronous rectification systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's current datasheet before procurement. Confirm that the TO-220F form factor matches the target PCB footprint and thermal management requirements. Ensure compliance with RoHS and halogen-free standards if required by the end application specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-Channel MOSFET with low RDS(ON) is required for synchronous rectification or high-frequency switching. Consider the TO-220F package for through-hole mounting and adequate thermal dissipation. Evaluate the gate charge and threshold voltage to ensure compatibility with the intended driver circuitry for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for power management applications. It represents a through-hole alternative to surface-mount variants within the same electrical family, offering robust performance in standard industrial and consumer electronics environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 100V N-Channel MOSFETs in TO-220 packages with comparable RDS(ON) and current ratings. Verify pinout compatibility and thermal resistance values when considering cross-brand replacements.

Single FETs, MOSFETs FAQ

Is the AOTF66920L tested for unclamped inductive switching?

Yes, the datasheet confirms that the device undergoes 100% unclamped inductive switching (UIS) testing.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGS) rating is ±20V.