AOTF7N60FD

Single FETs, MOSFETs Overview

The AOTF7N60FD is a through-hole N-channel power MOSFET manufactured by Alpha & Omega Semiconductor. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 7 A at case temperature. The device has a maximum on-resistance (Rds(on)) of 1.45 Ohms at 3.5 A and 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 25 nC at 10 V, input capacitance (Ciss) of 995 pF at 25 V, and a gate-source threshold voltage (Vgs(th)) of 4.2 V at 250 µA. Maximum power dissipation is 39 W, with an operating junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Fabricated using an advanced high-voltage MOSFET process designed for robustness in AC-DC applications.
• Integrates a fast recovery diode alongside the standard N-channel MOSFET structure.
• Optimized for low on-resistance and reduced input capacitance to enhance system efficiency.

Single FETs, MOSFETs Applications

• AC-DC power supply circuits
• General-purpose switching applications requiring high voltage isolation
• Power conversion systems utilizing integrated body diodes

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix FD indicates the integrated fast recovery diode configuration, as this distinguishes it from standard MOSFET variants within the same voltage class. Confirm package compatibility with TO-220F footprints during layout design. Check manufacturer documentation for any recent product change notices regarding pinout or thermal characteristics to ensure design continuity.

Single FETs, MOSFETs Selection Notes

Select this component when a discrete flyback or freewheeling diode is undesirable due to space constraints or reverse recovery losses. The integrated fast recovery diode simplifies circuit topology compared to separate diode solutions. Ensure the thermal management strategy supports the 39 W dissipation rating under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the AOTF series of through-hole power MOSFETs from Alpha & Omega Semiconductor. It utilizes the TO-220F package, which provides enhanced thermal performance compared to standard TO-220 packages. The device is engineered for general-purpose power switching where high voltage blocking capability and moderate current handling are required.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600 V rating, 7 A current capacity, and TO-220F package. Verify that alternative parts also integrate a fast recovery diode if that feature is critical to the original design. Compare Rds(on) and Qg values to ensure equivalent switching performance and conduction losses.