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AOTF7T60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CHANNEL 600V 7A TO220F. Review the specifications below when checking this part for your BOM.
The AOTF7T60L is a 600V N-Channel MOSFET utilizing AlphaMOS-II trench technology in a TO-220F Green tube package. It features a maximum drain-source voltage of 600V and a continuous drain current of 7A at 25°C case temperature. The device exhibits a maximum on-resistance of 1.1Ω at VGS=10V and ID=3.5A, with a typical gate charge of 16nC. Thermal resistance from junction to case is 4.3°C/W, supporting a power dissipation of 30W at 25°C. It operates within a junction temperature range of -55°C to 150°C.
Verify the specific ordering suffix 'L' corresponds to the TO-220F Green Tube packaging configuration as documented in the manufacturer's datasheet. Confirm that the component meets the required environmental compliance standards, specifically RoHS and Halogen Free status, before finalizing procurement specifications.
Select this component for designs requiring a 600V rated N-Channel MOSFET with moderate current handling capabilities. Consider the thermal characteristics, specifically the 4.3°C/W junction-to-case resistance, when designing heatsinking solutions. Ensure the gate drive circuitry can support the specified gate charge requirements for optimal switching performance.
This part belongs to the AOTF series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It utilizes the TO-220F Green package variant, distinguishing it from standard TO-220 packages. The device is designed for general market applications rather than critical life support systems.
Direct substitutes include the AOTF7T60, which shares identical electrical specifications but may differ in packaging form factor. Verify pinout compatibility and thermal resistance values when considering alternative packages within the same product family.
The device supports a single pulsed avalanche energy of 29mJ and a repetitive avalanche energy of 0.3mJ.
Yes, the MOSFET is rated for a maximum dv/dt of 50 V/ns.
The body diode reverse recovery time (trr) is typically 426ns under test conditions of IF=7A and dI/dt=100A/μs.
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