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AOTF8N80 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 800V 7.4A TO220-3F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOTF8N80
- Description：MOSFET N-CH 800V 7.4A TO220-3F
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.63Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：32 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1650 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220F
- Package / Case：TO-220-3 Full Pack
Single FETs, MOSFETs datasheet and documents for AOTF8N80
Single FETs, MOSFETs Overview
The AOTF8N80 is an N-channel MOSFET from Alpha & Omega Semiconductor Inc., designed for through-hole mounting in a TO-220F package. It features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 7.4 A at case temperature. The device operates within a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 50 W at the case. Key electrical parameters include a gate charge (Qg) of 32 nC at 10 V and an input capacitance (Ciss) of 1650 pF at 25 V.
Single FETs, MOSFETs Feature Summary
- High-voltage capability suitable for demanding power switching applications
- Through-hole construction for robust mechanical attachment
- Optimized thermal performance via dedicated case dissipation path
Single FETs, MOSFETs Applications
- Industrial motor control systems
- Power supply circuits requiring high voltage isolation
- Automotive power management modules
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package integrity and pin alignment prior to assembly. Ensure storage conditions comply with moisture sensitivity level requirements to prevent internal damage during soldering processes.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage blocking capability and through-hole reliability are required. Compare on-resistance and thermal resistance values against alternative packages to ensure compatibility with existing heat sinking infrastructure and PCB layout constraints.
Single FETs, MOSFETs Part Context
This part belongs to the AOT8 series of N-channel MOSFETs, which are engineered for general-purpose power switching. The series emphasizes high breakdown voltage and ruggedness for industrial environments. The TO-220F variant provides enhanced thermal conductivity compared to standard plastic packages.
Single FETs, MOSFETs Replacement Considerations
Compatible substitutes include FQP8N80C and IXFP7N80P. Verify pinout compatibility and thermal characteristics before substitution to maintain circuit performance.
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