Single FETs, MOSFETs AOU3N50 product image

AOU3N50

$0.90
  • Description:MOSFET N-CH 500V 2.8A TO251-3
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:97309dc84362 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AOU3N50 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 500V 2.8A TO251-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOU3N50

  • Description:MOSFET N-CH 500V 2.8A TO251-3
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:331 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):57W (Tc)
  • Operating Temperature:-50°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-251-3
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for AOU3N50

AOU3N50

Single FETs, MOSFETs Overview

The AOU3N50 is a 500V N-Channel MOSFET from Alpha & Omega Semiconductor, designed for high-performance AC-DC applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 2.8A at VGS=10V. The device exhibits a typical on-resistance (RDS(on)) of 2.3Ω at VGS=10V and ID=1.5A. Key electrical parameters include a gate threshold voltage range of 3.5V to 4.5V, total gate charge of 6.7nC to 8.0nC, and input capacitance of 221pF to 331pF. Thermal characteristics specify a junction-to-case resistance of 2.2°C/W and a junction-to-ambient resistance of 55°C/W in still air.

Single FETs, MOSFETs Feature Summary

  • Advanced high-voltage MOSFET process optimized for robustness in offline power supply designs.
  • Guaranteed avalanche capability with 100% UIS testing for enhanced reliability.
  • High dv/dt ruggedness rated at 50 V/ns for improved performance in switching applications.

Single FETs, MOSFETs Applications

  • Offline power supply designs
  • AC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official documentation to confirm package type and tape/reel specifications. Confirm that the component meets all absolute maximum ratings for your intended operating temperature and voltage conditions before integration. Ensure compliance with export control regulations and applicable legal requirements during acquisition.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 500V rating with moderate current handling capabilities around 2.8A. Consider the thermal resistance values when designing heatsinking solutions, particularly for TO252 packages. Evaluate the gate charge and capacitance parameters to ensure compatibility with your driver circuitry for efficient switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the AOD3N50/AOU3N50 series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. These devices are fabricated using an advanced high-voltage process technology aimed at delivering high performance and robustness specifically tailored for popular AC-DC applications and offline power supplies.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.

Single FETs, MOSFETs FAQ

Is the AOU3N50 tested for avalanche capability?

Yes, the datasheet confirms that the device has been 100% UIS (Unclamped Inductive Switching) tested.

What is the peak diode recovery dv/dt rating?

The device supports a peak diode recovery dv/dt of 50 V/ns.

AOU3N50AOU3N50
$0.90
Buy Now