AOU3N60

Single FETs, MOSFETs Overview

The AOU3N60 is a single N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2.5A at case temperature. The device utilizes IPAK packaging, also known as TO-251-3 with short leads. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±30V and a power dissipation of 83W at case temperature. The operating junction temperature range extends from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 600V drain-source breakdown
• Robust thermal performance supporting up to 83W power dissipation
• Designed for through-hole mounting in compact IPAK packages

Single FETs, MOSFETs Applications

• Power switching circuits
• High-voltage discrete transistor applications
• General purpose power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as IPAK refers to TO-251-3 with short leads. Confirm component status, as listings indicate varying lifecycle stages. Ensure compatibility with through-hole assembly processes. Cross-reference datasheet revisions for accurate electrical limits. Validate supplier documentation against official Alpha & Omega Semiconductor specifications before integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 600V blocking capability with moderate current handling. The IPAK package suits through-hole designs needing compact footprints. Evaluate thermal management requirements given the 83W dissipation rating. Compare gate charge and threshold voltage against drive circuit capabilities. Ensure operating temperatures remain within the specified -55°C to 150°C junction range.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's high-voltage MOSFET portfolio. It complements similar devices like the AOT3N60 and AOU2N60, which share the 600V rating but differ in current capacity and package types. The AOU3N60 specifically targets through-hole implementations, distinguishing it from surface-mount alternatives in the same voltage class.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other 600V N-channel MOSFETs in IPAK or TO-251-3 packages. Verify pinout compatibility and thermal resistance values. Check if alternative parts meet the 2.5A continuous current requirement. Ensure gate threshold voltages align with existing drive logic levels.