AOUS66414

Single FETs, MOSFETs Overview

The AOUS66414 is a 40V N-Channel Power MOSFET utilizing AlphaSGT™ technology in an UltraSO8 package. It features a drain-source voltage of 40V and continuous drain current ratings of 92A at case temperature and 42A at ambient temperature. The device offers low on-resistance, specified as less than 2.2mΩ at VGS=10V and less than 3.2mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.3V to 2.3V, total gate charge of 55nC to 80nC at 10V, and input capacitance of 4350pF. Thermal characteristics include a junction-to-case thermal resistance of 1.35°C/W and a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

• Employs AlphaSGT™ trench technology for optimized performance
• Features logic level driving capability with low gate threshold voltage
• Demonstrates excellent gate charge and on-resistance figure of merit
• Includes 100% unclamped inductive switching (UIS) testing

Single FETs, MOSFETs Applications

• High frequency switching circuits
• Synchronous rectification applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the manufacturer's official documentation before procurement. Confirm that the UltraSO8 form factor aligns with the target PCB footprint requirements. Ensure compliance with RoHS and halogen-free standards if required by the end product specifications. Cross-reference the part number with the latest datasheet revision to validate all electrical and thermal parameters.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current density in compact surface-mount layouts. The low RDS(ON) values support efficient power conversion in synchronous rectifier topologies. Evaluate the thermal management strategy based on the junction-to-case resistance and expected operating temperatures. Consider the gate charge characteristics when designing drive circuits for high-frequency operation.

Single FETs, MOSFETs Part Context

This component belongs to the AlphaSGT™ family of power MOSFETs from Alpha & Omega Semiconductor. It is designed to address the increasing complexity of power requirements in advanced electronics. The UltraSO8 package provides a balance between power handling capabilities and space efficiency for modern electronic devices.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides or contact the manufacturer directly for verified alternative part numbers. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specification sheet.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the AOUS66414?

The maximum pulsed drain current (IDM) is rated at 360A.

Is the AOUS66414 suitable for use in life support devices?

No, applications or use as critical components in life support devices or systems are not authorized by the manufacturer.