AOUS66616

$1.29

Description：MOSFET N-CH 60V 33A/92A ULTRASO8
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:934676248f0e Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOUS66616 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 60V 33A/92A ULTRASO8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOUS66616

Description：MOSFET N-CH 60V 33A/92A ULTRASO8
Series：AlphaSGT™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：33A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2870 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：6.2W (Ta), 92.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：UltraSO-8™
Package / Case：3-PowerSMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for AOUS66616

AOUS66616

Single FETs, MOSFETs Overview

The AOUS66616 is a 60V N-Channel Power MOSFET utilizing AlphaSGT™ technology in an UltraSO-8 package. It features a maximum drain-source voltage of 60V and continuous drain currents of 33A at Ta=25°C, 92A at Tc=25°C, and 40A at Ta=70°C. The on-resistance is less than 3.3mΩ at VGS=10V and 20A, or less than 4.7mΩ at VGS=6V and 20A. Gate charge is 60nC max at 10V. Thermal resistance junction-to-case is 1.35°C/W, with power dissipation up to 92.5W at Tc=25°C.

Single FETs, MOSFETs Feature Summary

AlphaSGT™ trench technology for low on-resistance and excellent figure of merit
100% tested for unclamped inductive switching (UIS) capability
100% gate resistance tested for reliability

Single FETs, MOSFETs Applications

Synchronous rectification in DC/DC converters
Synchronous rectification in AC/DC converters
Industrial drive applications
Motor drive applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required tape and reel quantity of 3000 units. Confirm the component revision aligns with design requirements, as datasheets may be updated without notice. Ensure thermal management designs account for the specified junction-to-case resistance values under actual operating conditions rather than relying solely on ambient ratings.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution requires high current handling in a small footprint. The low RDS(ON) supports efficient synchronous rectification. Verify that the application's gate drive voltage meets the threshold for optimal conduction, particularly if operating below 10V. Consider the thermal derating curves for accurate power dissipation limits in enclosed environments.

Single FETs, MOSFETs Part Context

This device belongs to the AlphaSGT™ series from Alpha & Omega Semiconductor Inc., designed for high-performance power management. The UltraSO-8 package provides a balance between thermal performance and board space efficiency compared to larger through-hole packages, targeting modern high-density electronics.