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AOW10N65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 10A TO262. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOW10N65
- Description：MOSFET N-CH 650V 10A TO262
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1645 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：250W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for AOW10N65
Single FETs, MOSFETs Overview
The AOW10N65 is a 650V, 10A N-Channel Power MOSFET manufactured by Alpha & Omega Semiconductor. Fabricated using an advanced high-voltage process, it features low RDS(on), Ciss, and Crss with guaranteed avalanche capability. Key electrical parameters include a drain-source voltage (VDS) of 750V at 150°C, a continuous drain current (ID) of 10A at VGS=10V, and an on-resistance (RDS(ON)) of less than 1Ω at VGS=10V. The device undergoes 100% UIS and Rg testing.
Single FETs, MOSFETs Feature Summary
- Advanced high-voltage MOSFET process for robust performance in AC-DC applications
- Low on-resistance and capacitance values for improved efficiency
- Guaranteed avalanche capability for enhanced reliability
Single FETs, MOSFETs Applications
- Offline power supply designs
- AC-DC converter circuits
- General-purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet version and package type before procurement. Confirm if halogen-free requirements necessitate the 'L' suffix variant. Ensure compatibility with existing thermal management solutions given the power dissipation characteristics. Cross-reference official manufacturer documentation to confirm current production status and availability constraints.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage blocking capability with moderate current handling. The low gate charge and on-resistance make it suitable for efficient switching operations. Consider the TO-247 package for through-hole mounting and adequate heat sinking. Evaluate thermal resistance requirements based on the specific application duty cycle and ambient temperature conditions.
Single FETs, MOSFETs Part Context
This part belongs to Alpha & Omega Semiconductor's high-voltage MOSFET portfolio, designed for offline power supplies. It shares process technology with similar series parts like the AOT10N65, offering comparable electrical performance. The device is optimized for cost-effective integration into standard AC-DC conversion topologies where avalanche ruggedness is beneficial.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other 650V, 10A N-Channel MOSFETs from various manufacturers. Verify pinout compatibility and thermal characteristics when replacing. Check for equivalent RDS(ON) and avalanche energy ratings to ensure circuit performance remains within design specifications.
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