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AOW11N60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 11A TO262. Review the specifications below when checking this part for your BOM.
The AOW11N60 is a 600V N-Channel Power MOSFET from Alpha & Omega Semiconductor, packaged in TO-262. It features a maximum continuous drain current of 11A at 25°C and a typical on-resistance of 0.7 ohms at VGS=10V. The device includes an integrated body diode with a reverse recovery time of 600ns max. Key electrical parameters include a gate threshold voltage of 4.5V max, total gate charge of 37nC max, and avalanche energy ratings of 690mJ single pulse and 272mJ repetitive. Thermal resistance junction-to-case is 0.46°C/W.
Verify the specific datasheet revision (Rev1.0 March 2024) matches your design requirements. Confirm package dimensions against the TO-262 drawing provided in the official documentation. Ensure thermal management calculations utilize the specified RqJC value of 0.46°C/W for accurate junction temperature estimation under load.
Select this component for designs requiring a 600V rating with moderate current handling up to 11A. Consider the 0.7 ohm on-resistance for conduction loss analysis. The TO-262 package is suitable for surface mount applications where higher power dissipation than DPAK is needed. Evaluate the avalanche energy limits if operating in inductive switching environments.
This part belongs to the AOW series of N-Channel MOSFETs manufactured by Alpha & Omega Semiconductor. The series utilizes advanced high voltage processes optimized for offline power supplies. The TO-262 package provides a balance between thermal performance and mounting flexibility compared to smaller surface mount packages.
Direct substitutes must match the 600V rating, 11A current, and TO-262 package. Verify that alternative components meet or exceed the 0.7 ohm on-resistance and 690mJ avalanche energy specifications. Check pinout compatibility before integration.
Yes, the datasheet confirms that the device undergoes 100% UIS (Unclamped Inductive Switching) testing and guarantees specific single pulse and repetitive avalanche energy levels.
The absolute maximum rating for Gate-Source Voltage (VGS) is ±30V.
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