AOW2918

Description：MOSFET N-CH 100V 13A/90A TO262
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:cff9aa42273a Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOW2918 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 100V 13A/90A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOW2918

Description：MOSFET N-CH 100V 13A/90A TO262
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：53 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3430 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 267W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AOW2918

AOW2918

Single FETs, MOSFETs Overview

The AOW2918 is a 100V N-Channel MOSFET utilizing Trench technology for high-frequency switching. It features an extremely low RDS(ON) of less than 7mΩ at VGS=10V and supports a continuous drain current (ID) of 90A. The device includes a soft recovery body diode and is 100% UIS tested. Key electrical parameters include a breakdown voltage (BV_DSS) of 100V, gate threshold voltage (VGS(th)) ranging from 2.7V to 3.9V, total gate charge (Qg) of 53nC max, and reverse recovery charge (Qrr) of 320nC max. Thermal resistance junction-to-case (RθJC) is 0.56°C/W.

Single FETs, MOSFETs Feature Summary

Optimized Trench MOSFET technology for efficient high-frequency switching performance with minimized power losses.
Soft recovery body diode characteristics designed to reduce switching noise and improve efficiency in synchronous applications.
Robust avalanche capability verified through 100% Unclamped Inductive Switching (UIS) testing.

Single FETs, MOSFETs Applications

Boost converters
Synchronous rectifiers
Consumer power supplies
Telecom power supplies
Industrial power supplies
LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package type and tape/reel specifications against the manufacturer's official datasheet before ordering. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing standards. Ensure that the supplier provides traceability documentation consistent with Alpha & Omega Semiconductor Inc. quality control processes.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and fast switching speeds within a 100V rating. Consider the thermal management capabilities provided by the TO-262 package and the specified RθJC value. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching performance.

Single FETs, MOSFETs Part Context

The AOW2918 belongs to the family of N-Channel Power MOSFETs manufactured by Alpha & Omega Semiconductor Inc. It is designed using advanced trench technology to deliver superior performance compared to standard planar devices. The device is intended for general-purpose power switching applications where efficiency and reliability are critical.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the source material.

Single FETs, MOSFETs FAQ

Is the AOW2918 suitable for high-frequency switching applications?

Yes, the device uses Trench MOSFET technology optimized for efficient high-frequency switching performance with minimized power losses due to low RDS(ON) and Crss.