AOW29S50

Single FETs, MOSFETs Overview

The AOW29S50 is an N-channel MOSFET from Alpha & Omega Semiconductor, designed for high-power applications. It features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 29 A at case temperature. The device operates with a gate-source voltage (Vgs) maximum of ±30 V and exhibits a maximum on-resistance (Rds(on)) of 150 mΩ at 14.5 A and 10 V. Key electrical parameters include a gate charge (Qg) of 26.6 nC at 10 V and an input capacitance (Ciss) of 1312 pF at 100 V. The component supports a power dissipation of 357 W at case temperature and functions within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• High-voltage capability suitable for demanding power switching environments
• Low on-resistance optimized for efficient conduction at specified currents
• Robust thermal performance supporting high power dissipation levels

Single FETs, MOSFETs Applications

• Industrial motor control systems
• Power supply circuits requiring high voltage isolation
• Automotive power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant, as TO-262 and TO-263 forms exist within the product family. Confirm RoHS compliance status and moisture sensitivity level requirements against project specifications. Ensure the selected component matches the exact pinout and thermal pad configuration required by the target PCB layout to avoid integration errors.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating and 29 A continuous current capacity are required in a surface-mount or through-hole compatible package. Evaluate the thermal resistance characteristics against the system's heat sinking capabilities. Consider the gate charge specifications for driving circuit compatibility and switching frequency limitations in the intended application design.

Single FETs, MOSFETs Part Context

This part belongs to the aMOS™ series from Alpha & Omega Semiconductor, focusing on power transistors. It serves as a through-hole or surface-mount alternative to similar high-voltage MOSFETs. The basic product number AOB29S50 indicates a related variant, potentially differing in packaging or minor electrical tolerances while maintaining core performance metrics.

Single FETs, MOSFETs Replacement Considerations

The AOB29S50 is listed as the basic product number, suggesting it may be a direct functional equivalent or closely related variant. Verify package compatibility between TO-262 and TO-263 formats if substituting. Cross-reference datasheets for identical Rds(on) and Vdss ratings to ensure seamless integration without redesigning the thermal or drive circuitry.