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AOWF10N65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 10A TO262F. Review the specifications below when checking this part for your BOM.
The AOWF10N65 is a 650V N-Channel Power MOSFET from Alpha & Omega Semiconductor, housed in a TO-262 package. It features a maximum continuous drain current of 10A at VGS=10V and a maximum on-resistance (RDS(on)) of less than 0.75Ω at the same gate voltage. The device is designed for high-voltage applications, offering low input capacitance and reverse transfer capacitance to support efficient switching. It includes guaranteed avalanche capability and undergoes 100% UIS and Rg testing to ensure robustness in offline power supply designs.
Verify the specific suffix 'F' in the part number AOWF10N65 against the manufacturer's official datasheet to confirm package type and pinout compatibility. Ensure that design requirements align with the specified 650V breakdown voltage and 10A current limits. Confirm RoHS compliance status through the latest environmental documentation provided by Alpha & Omega Semiconductor before finalizing procurement specifications.
Select this component for designs requiring a rugged N-Channel MOSFET with proven avalanche endurance. The low on-resistance and capacitance values make it suitable for improving efficiency in offline power supplies. Verify that the thermal management solution supports the TO-262 package dissipation capabilities under the intended operating conditions and load profiles.
This device belongs to the AOW series of high-voltage MOSFETs manufactured by Alpha & Omega Semiconductor. It utilizes an advanced process technology aimed at delivering robust performance in popular AC-DC applications. The series is characterized by its ability to handle high voltages while maintaining low switching losses and ensuring reliability through comprehensive testing protocols.
Yes, the device features guaranteed avalanche capability and undergoes 100% Unclamped Inductive Switching (UIS) testing.
The maximum RDS(on) is less than 0.75Ω when measured at VGS=10V.
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