AOWF15S65

$1.07

Description：MOSFET N-CH 650V 15A TO262F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:f88826d0d8cc Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOWF15S65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 15A TO262F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOWF15S65

Description：MOSFET N-CH 650V 15A TO262F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：290mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：841 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262F
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AOWF15S65

AOWF15S65

Single FETs, MOSFETs Overview

The AOWF15S65 is a through-hole N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOSTM high-voltage process. It features a drain-source voltage of 650V and a continuous drain current of 15A at case temperature. The device offers a maximum on-resistance of 0.29 ohms at 10V gate drive and a typical total gate charge of 17.2nC. It includes guaranteed avalanche capability with repetitive energy ratings up to 86mJ and single-pulse ratings up to 28mJ. The component is housed in a TO-262 package.

Single FETs, MOSFETs Feature Summary

Fabricated using advanced aMOSTM high-voltage process for robust switching performance
Guaranteed avalanche capability with 100% UIS testing
Optimized low RDS(on) and Qg for efficient offline power supply designs
High dv/dt ruggedness for peak diode recovery

Single FETs, MOSFETs Applications

Offline power supply designs
Switching applications requiring high robustness
Power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix F indicates the TO-262 package configuration distinct from the standard TO-220 variant. Confirm RoHS compliance status and check for any recent product change notices or lifecycle updates directly from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and reliable avalanche handling. Consider the thermal resistance characteristics when designing heatsinking solutions. Ensure gate drive voltages align with the specified thresholds for optimal on-state performance and switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the AOS aMOSTM series of power transistors designed for high-performance applications. The manufacturer specializes in discrete power devices and wide bandgap technologies, integrating process technology with advanced packaging to address complex power management requirements in various electronic equipment.