Single FETs, MOSFETs AOWF190A60 product image

AOWF190A60

$1.36
  • Description:N
  • Series:aMOS5™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)

SKU:4822f8886795 Category: Brand:

  
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AOWF190A60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is N. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOWF190A60

  • Description:N
  • Series:aMOS5™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:190mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1935 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):27W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262F
  • Package / Case:TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AOWF190A60

AOWF190A60

Single FETs, MOSFETs Overview

The AOWF190A60 is a 600V N-Channel Power MOSFET from Alpha & Omega Semiconductor, utilizing aMOS5 technology. It features a maximum drain-source voltage of 600V and a continuous drain current of 20A at case temperature. The device exhibits a typical on-resistance of 0.17Ω and a maximum of 0.19Ω at VGS=10V. Key dynamic parameters include a total gate charge of 34nC and a reverse recovery time of 341ns for the body diode. Packaged in TO-262F, it supports junction temperatures up to 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes aMOS5 technology for enhanced switching performance and low conduction losses.
  • Features a robust body diode with optimized reverse recovery characteristics.
  • Designed for high-voltage applications with a 600V breakdown rating.

Single FETs, MOSFETs Applications

  • High-frequency power conversion circuits
  • DC-DC converter topologies
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-262F) against design requirements. Confirm thermal management strategies align with the specified junction-to-case resistance. Ensure sourcing channels provide genuine components with traceable documentation to maintain reliability standards.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a balance of low on-resistance and fast switching speeds. Consider the TO-262F footprint for PCB layout compatibility. Evaluate thermal dissipation needs based on the 20A continuous current rating and operating ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the aMOS5 series of N-channel power transistors. It shares similar electrical characteristics with other 600V devices in the lineup but offers specific packaging and thermal properties suited for surface-mount applications requiring efficient heat dissipation.

Single FETs, MOSFETs Replacement Considerations

AOB190A60CL is a manufacturer-recommended alternative with compatible specifications.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 80A.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 3.2V to 4.6V at a drain current of 250µA.

AOWF190A60AOWF190A60
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