AOWF25S65

Description：MOSFET N-CH 650V 25A TO262F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:f45102cbbed1 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOWF25S65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 25A TO262F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOWF25S65

Description：MOSFET N-CH 650V 25A TO262F
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：190mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：26.4 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1278 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：28W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262F
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for AOWF25S65

AOWF25S65

Single FETs, MOSFETs Overview

The AOWF25S65 is a N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the αMOSTM process. It features a Drain-Source Voltage (VDS) of 650V and a continuous drain current (ID) of 25A at 25°C case temperature. The maximum on-resistance (RDS(on)) is 0.19Ω at VGS=10V and TJ=25°C. Key dynamic parameters include a typical total gate charge (Qg) of 26.4nC and an effective output capacitance energy (Eoss) of 5.8μJ at 400V. The device is housed in a TO-262 package with a junction-to-case thermal resistance (RθJC) of 4.5°C/W.

Single FETs, MOSFETs Feature Summary

Fabricated using advanced αMOSTM high voltage process for robust switching performance.
Guaranteed avalanche capability with 100% UIS testing.
Optimized low RDS(on), Qg, and Eoss for efficient offline power supply designs.

Single FETs, MOSFETs Applications

Offline power supply designs
Switching applications requiring high voltage ruggedness

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'F' corresponds to the TO-262 package configuration as detailed in the datasheet. Confirm that the component meets consumer market qualification standards, as critical life support applications are explicitly excluded by the manufacturer. Ensure sourcing channels provide valid documentation matching the Rev0 December 2011 specification sheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring 650V blocking capability with moderate current handling up to 25A. Consider the TO-262 package form factor and its associated thermal characteristics, specifically the 4.5°C/W junction-to-case resistance, for heatsinking requirements. Evaluate the 26.4nC gate charge against driver capabilities to ensure adequate switching speed without excessive drive losses.

Single FETs, MOSFETs Part Context

This part belongs to the AOW series of high-voltage power transistors manufactured by Alpha & Omega Semiconductor. The series leverages the proprietary αMOSTM technology to balance conduction losses with switching efficiency. The AOWF25S65 variant specifically denotes the surface-mount TO-262 packaging option within this product line.

Single FETs, MOSFETs Replacement Considerations

The AOW25S65 is the through-hole equivalent within the same family, sharing identical electrical specifications but differing in package type. Verify pinout compatibility and thermal interface requirements when substituting between these variants.