ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
AOWF600A70F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 700V 8.5A TO262F. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOWF600A70F
- Description：MOSFET N-CH 700V 8.5A TO262F
- Series：aMOS5™
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：900 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262F
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for AOWF600A70F
Single FETs, MOSFETs Overview
The AOWF600A70F is a 700V N-Channel Power Transistor utilizing proprietary aMOS5 technology. It features a maximum drain-source voltage of 800V and a continuous drain current of 2.1A at TC=100°C, or 8.5A at TC=25°C. The device offers a maximum on-resistance of 0.6Ω at VGS=10V and ID=2.5A. Key electrical parameters include a gate threshold voltage ranging from 3.4V to 4.6V, total gate charge of 14.5nC, and input capacitance of 900pF. Thermal characteristics specify a junction-to-case resistance of 5°C/W and a maximum junction temperature of 150°C.
Single FETs, MOSFETs Feature Summary
- Proprietary aMOS5 technology designed for low on-resistance and optimized switching performance.
- Enhanced body diode structure providing robustness and fast reverse recovery capabilities.
- Optimized switching parameters engineered to improve electromagnetic interference (EMI) performance.
Single FETs, MOSFETs Applications
- Flyback converters for Switched-Mode Power Supplies (SMPS)
- Charger and PD Adapter designs
- Television power circuits
- Lighting applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'F' corresponds to the TO-262F tube package configuration as documented in the official datasheet. Confirm that the component meets RoHS compliance standards prior to integration. Ensure all design parameters align with the absolute maximum ratings provided by Alpha & Omega Semiconductor Inc. to prevent device failure during operation.
Single FETs, MOSFETs Selection Notes
Select this component for high-voltage applications requiring efficient switching and low conduction losses. The TO-262F package facilitates through-hole mounting suitable for higher power dissipation scenarios. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within safe operating limits under varying load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the aMOS5 series of N-Channel MOSFETs from Alpha & Omega Semiconductor Inc. The series emphasizes advanced silicon technologies for improved efficiency. The AOWF600A70F specifically targets high-voltage power conversion needs, differentiating itself through enhanced ruggedness and EMI optimization compared to standard discrete transistors.
Single FETs, MOSFETs Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal characteristics if considering alternative manufacturers for redesign purposes.
Single FETs, MOSFETs FAQ
What is the maximum avalanche energy rating for this component?
The repetitive avalanche energy rating is 19mJ, while the single pulsed avalanche energy rating is 20mJ, based on low frequency and duty cycles keeping initial TJ at 25°C.
How does the device handle body diode reverse recovery?
The device features an enhanced body diode with a reverse recovery time (Trr) of 260ns and a reverse recovery charge (Qrr) of 3.5mC, supporting robust performance in hard-switching applications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
