ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 30V 5.3A 8SOP
- Series：-
- Mfr：EVVO
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.3A (Ta)
- Rds On (Max) @ Id, Vgs：41mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：504pF @ 15V
- Power - Max：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
Download product information
Overview
The APM4953-EV is a dual P-channel enhancement mode MOSFET in an SOP-8 package. It features a drain-source voltage of -30V and a continuous drain current of 4.9A at 25°C. The device exhibits a typical on-resistance of 53mΩ at VGS=-10V and 80mΩ at VGS=-4.5V. Gate-source voltage ratings are ±20V, with a threshold voltage of 2.3V to 3V at 250uA. Maximum power dissipation is 2W at Ta=25°C.
Feature Summary
- Dual P-channel configuration for efficient load management
- Reliable and rugged ESD protection capabilities
- Lead-free and green RoHS compliant construction
Applications
- Power management in notebook computers
- Portable equipment power circuits
- Battery powered systems
Procurement Notes
Verify the specific manufacturer designation, as sources list Anpec and EVVO. Confirm the exact suffix requirements for your supply chain needs. Ensure the component meets RoHS compliance standards if required by your assembly process. Check datasheet revisions for any updates to electrical characteristics or pinout definitions before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring dual P-channel switching within a compact surface-mount footprint. The low on-resistance supports high-efficiency power delivery. Verify that the gate drive voltage levels align with the specified threshold and on-resistance conditions. Ensure thermal management strategies accommodate the 2W power dissipation limit under operating conditions.
Part Context
This part belongs to the family of dual P-channel enhancement mode MOSFETs designed for portable electronics. It integrates two independent P-channel devices in a single SOP-8 package. The design focuses on minimizing board space while providing robust switching performance for battery-powered applications and power management circuits.
Replacement Considerations
Cross-reference with other dual P-channel MOSFETs in SOP-8 packages. Verify matching electrical parameters such as VDS, ID, and RDS(ON). Ensure pinout compatibility and thermal characteristics align with the original design requirements before substitution.
