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The UMW APM4953 is a dual P-channel enhancement mode MOSFET housed in an SOP-8 package. It features a drain-source voltage rating of -30V and a continuous drain current of -5.3A at VGS = -10V. The device exhibits low on-state resistance, specified as less than 41mΩ at VGS = -10V and less than 75mΩ at VGS = -4.5V. Total power dissipation is rated at 2.0W at 25°C ambient temperature. Key dynamic parameters include a total gate charge of 12nC and an input capacitance of 504pF. The component supports an operating junction temperature range from -55°C to +150°C.
Verify the specific ordering code against the manufacturer's official documentation to confirm package type and delivery mode. Ensure that the requested variant matches the required base quantity and tape-and-reel specifications. Cross-reference the part number with the latest datasheet revision to confirm electrical characteristics and marking details before finalizing procurement orders.
Select this component for designs requiring dual P-channel switching with a -30V voltage rating. Consider the 2.0W power dissipation limit and 50°C/W thermal resistance when designing PCB copper areas. Verify that the gate drive voltage meets the requirements for achieving the specified low on-state resistance values during operation.
The APM4953 belongs to the category of dual P-channel MOSFETs manufactured by UMW (UTD Semiconductor). It is designed for surface-mount assembly using the SOP-8 footprint. The device integrates two independent channels to save board space compared to discrete single-channel solutions.
Check for direct pin-compatible alternatives with matching -30V ratings and similar RDS(ON) specifications. Verify that substitute components support the required -5.3A continuous current and 2.0W power dissipation limits. Confirm package compatibility and thermal performance metrics before implementation.