APT1001R1BN

Description：MOSFET N-CH 1000V 10.5A TO247AD
Series：POWER MOS IV®
Mfr：Microchip Technology
Package：Tube

SKU:edb10ed97d3d Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT1001R1BN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 10.5A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1001R1BN

Description：MOSFET N-CH 1000V 10.5A TO247AD
Series：POWER MOS IV®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.1Ohm @ 5.25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2950 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT1001R1BN

APT1001R1BN

Single FETs, MOSFETs Overview

The APT1001R1BN is an N-channel enhancement mode high voltage power MOSFET from the Power MOS IV series. It features a TO-247 package with a drain-source voltage of 1000V and a continuous drain current of 10.5A at 25°C case temperature. The device has a maximum on-state resistance of 1.10 Ohms at VGS=10V and supports a total power dissipation of 310W. Key dynamic parameters include a total gate charge of 90nC to 130nC and a typical input capacitance of 2460pF to 2950pF.

Single FETs, MOSFETs Feature Summary

High voltage capability up to 1000V for robust operation in demanding environments
Low on-state resistance to minimize conduction losses
Enhanced safe operating area for reliable switching performance
Integrated body diode with defined reverse recovery characteristics

Single FETs, MOSFETs Applications

Motor control systems
Power supplies
Inverter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific part number suffix against official Microchip Technology documentation to confirm exact electrical tolerances and package variations. Ensure compatibility with existing thermal management designs, as junction-to-case thermal resistance is critical for maintaining performance within specified limits under load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high blocking voltage and moderate current handling are required in a through-hole package. Consider the gate charge requirements for driver selection and evaluate the thermal derating curves to ensure adequate heat sinking for the intended duty cycle and ambient temperature conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Power MOS IV family, designed for general-purpose high-voltage switching applications. It utilizes silicon technology to provide reliable performance across a wide temperature range from -55°C to 150°C junction temperature.