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APT1001RBVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 11A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT1001RBVRG
- Description：MOSFET N-CH 1000V 11A TO247
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：1Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：225 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：3660 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT1001RBVRG
Single FETs, MOSFETs Overview
The APT1001RBVRG is a through-hole N-channel Power MOSFET from the Microchip Power MOS V series, housed in a TO-247AB package. It features a drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 11 A at case temperature. The maximum on-resistance (Rds(on)) is 1 Ohm at 500 mA and 10 V gate-source voltage. The device has a gate threshold voltage (Vgs(th)) of 4 V max at 1 mA and a maximum gate charge (Qg) of 225 nC at 10 V.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1000 V breakdown rating for robust operation in demanding environments.
- Through-hole mounting design suitable for high-power thermal management applications.
- N-channel enhancement mode construction for standard logic-level control compatibility.
Single FETs, MOSFETs Applications
- High-voltage switching circuits
- Industrial power supplies
- Motor drive systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'VRG' against the official Microchip datasheet to confirm RoHS compliance and lead-free status. Ensure the ordering part number matches the exact package variant required for your PCB footprint. Cross-reference the manufacturer's latest documentation to confirm active production status and any recent parameter updates before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when a 1000 V rating is mandatory and through-hole assembly is preferred over surface mount alternatives. Evaluate the 1 Ohm on-resistance against thermal dissipation requirements, as it is higher than lower-voltage counterparts. Confirm that the 11 A current rating meets the peak load demands of the target application without exceeding junction temperature limits.
Single FETs, MOSFETs Part Context
This device belongs to the Power MOS V family, representing Microchip's silicon-based discrete transistor lineup. It serves as a high-voltage switching element within the broader portfolio of power semiconductors designed for industrial and commercial electronics. The TO-247AB package provides a standardized mechanical interface for heat sinking and board integration.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other 1000 V N-channel MOSFETs in TO-247 packages such as the APT1001RBN or APT1001RSVFRG, provided pinouts and electrical characteristics align with the original design specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
