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APT1001RSVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 11A D3PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT1001RSVRG
- Description：MOSFET N-CH 1000V 11A D3PAK
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：1Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：225 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：3660 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：D3PAK
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Single FETs, MOSFETs datasheet and documents for APT1001RSVRG
Single FETs, MOSFETs Overview
The APT1001RSVRG is a silicon N-channel Power MOSFET manufactured by Microchip Technology. It features a maximum drain-source voltage of 1000 V and a continuous drain current of 11 A at case temperature. The device exhibits a maximum on-resistance of 1 Ohm at 500 mA and 10 V gate-source voltage. It utilizes a D3PAK-3 (TO-268) surface-mount package.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 1000 V breakdown rating
- Optimized for low conduction losses via 1 Ohm on-resistance
- Designed for high-power switching applications
Single FETs, MOSFETs Applications
- High-voltage power supply circuits
- Industrial motor control systems
- Inverter topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'RG' against the official Microchip datasheet to confirm RoHS compliance status and any recent product change notifications. Ensure the D3PAK-3 footprint matches the design requirements before ordering, as packaging variations may exist within the family.
Single FETs, MOSFETs Selection Notes
Select this component when a 1000 V rating is required in a surface-mount form factor. Compare the 1 Ohm on-resistance against thermal dissipation limits in the target application. Verify that the 11 A current rating meets the peak load requirements under the expected operating temperature conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Microchip Power MOS IV or similar high-voltage discrete series. It serves as a rugged switching element designed for demanding industrial environments where reliability and high voltage blocking are critical parameters for system performance.
Single FETs, MOSFETs Replacement Considerations
Check for direct cross-reference part numbers from Microchip's official substitution lists. Verify pinout compatibility and electrical parameter equivalence if considering alternative manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
