SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
APT1002RBNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1000V 8A TO247AD. Review the specifications below when checking this part for your BOM.
The APT1002RBNG is an N-channel enhancement mode power MOSFET manufactured by Microsemi Corporation. It features a drain-source voltage rating of 1000 V and a continuous drain current capacity of 7 A at case temperature of 25°C. The device exhibits a maximum on-resistance of 2 Ω. Packaged in a TO-247AD flange mount housing, it supports a maximum power dissipation of 240 W. The component operates within a junction temperature range up to 150°C and includes a built-in body diode.
Verify the specific suffix against official Microsemi documentation to confirm compliance with lead-free and RoHS standards. Ensure the TO-247AD package dimensions match the target PCB footprint. Confirm that the 1000V rating aligns with the system's peak voltage requirements. Check for any obsolescence notices or lifecycle status updates from the manufacturer before finalizing procurement plans.
Select this component when high blocking voltage and moderate current handling are required in a robust through-hole package. The 2 Ω on-resistance influences conduction losses; ensure thermal design accommodates the resulting heat dissipation. Compare the 7 A continuous current limit against the application's peak load demands. Verify that the gate threshold characteristics suit the driving circuitry voltage levels.
This part belongs to the Microsemi high voltage power MOSFET family. It utilizes silicon metal-oxide semiconductor technology designed for reliable operation in demanding power electronics environments. The TO-247AD package provides a standardized form factor for mounting onto heatsinks, facilitating integration into various industrial and commercial power supply designs.
The APT1002RBN is a related variant within the same series. Verify pinout compatibility and electrical parameter differences before substitution. Ensure that any alternative component meets the 1000V breakdown and 7A current specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.