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APT1003RSFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 4A D3PAK. Review the specifications below when checking this part for your BOM.
The APT1003RSFLLG is a surface-mount N-channel Power MOS 7 power MOSFET in a D3PAK package. It features a 1000V drain-source breakdown voltage and a continuous drain current of 4A at 25°C case temperature. The device has a maximum on-state resistance of 3 ohms at 10V gate drive and 2A current. Total gate charge is 34nC, with an input capacitance of 694pF. It supports a junction temperature range from -55°C to 150°C and offers a total power dissipation of 139W.
Verify the specific suffix 'SFLL' against official Microchip documentation to confirm the exact surface mount D3PAK configuration. Ensure electrostatic discharge handling procedures are strictly followed during assembly due to component sensitivity. Cross-reference thermal impedance curves for accurate heat sink calculations under your specific operating conditions.
Select this component when high voltage isolation is required alongside low current capabilities. The D3PAK package provides a balance between thermal performance and surface mount convenience. Evaluate the 3 ohm on-resistance against your efficiency requirements, as it is relatively high compared to lower voltage alternatives.
This part belongs to the APT1003 series of Power MOS 7 devices manufactured by Microchip Technology. It utilizes silicon technology and is designed for robust performance in demanding power electronics applications requiring reliable switching and high voltage blocking capabilities.
APT1003RBFLL is a pin-compatible through-hole alternative in the TO-247 package offering identical electrical characteristics.
The peak diode recovery dv/dt is rated at 18 V/ns.
Yes, the repetitive avalanche energy is 4 mJ and single pulse avalanche energy is 425 mJ.
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