Single FETs, MOSFETs APT1003RSFLLG product image

APT1003RSFLLG

$10.17
  • Description:MOSFET N-CH 1000V 4A D3PAK
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube

SKU:c14697f8b12e Category: Brand:

  
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APT1003RSFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 4A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1003RSFLLG

  • Description:MOSFET N-CH 1000V 4A D3PAK
  • Series:POWER MOS 7®
  • Mfr:Microchip Technology
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1000 V
  • Current - Continuous Drain (Id) @ 25°C:4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:3Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:694 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3PAK
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT1003RSFLLG

APT1003RSFLLG

Single FETs, MOSFETs Overview

The APT1003RSFLLG is a surface-mount N-channel Power MOS 7 power MOSFET in a D3PAK package. It features a 1000V drain-source breakdown voltage and a continuous drain current of 4A at 25°C case temperature. The device has a maximum on-state resistance of 3 ohms at 10V gate drive and 2A current. Total gate charge is 34nC, with an input capacitance of 694pF. It supports a junction temperature range from -55°C to 150°C and offers a total power dissipation of 139W.

Single FETs, MOSFETs Feature Summary

  • Power MOS 7 technology reduces conduction and switching losses via lowered RDS(on) and Qg.
  • Patented metal gate structure enables exceptionally fast switching speeds.
  • Integrated fast recovery body diode minimizes reverse recovery charge and peak recovery current.

Single FETs, MOSFETs Applications

  • High-voltage DC-DC converters
  • Motor control circuits
  • Inductive load switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'SFLL' against official Microchip documentation to confirm the exact surface mount D3PAK configuration. Ensure electrostatic discharge handling procedures are strictly followed during assembly due to component sensitivity. Cross-reference thermal impedance curves for accurate heat sink calculations under your specific operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation is required alongside low current capabilities. The D3PAK package provides a balance between thermal performance and surface mount convenience. Evaluate the 3 ohm on-resistance against your efficiency requirements, as it is relatively high compared to lower voltage alternatives.

Single FETs, MOSFETs Part Context

This part belongs to the APT1003 series of Power MOS 7 devices manufactured by Microchip Technology. It utilizes silicon technology and is designed for robust performance in demanding power electronics applications requiring reliable switching and high voltage blocking capabilities.

Single FETs, MOSFETs Replacement Considerations

APT1003RBFLL is a pin-compatible through-hole alternative in the TO-247 package offering identical electrical characteristics.

Single FETs, MOSFETs FAQ

What is the peak diode recovery dv/dt rating?

The peak diode recovery dv/dt is rated at 18 V/ns.

Does the datasheet specify avalanche energy ratings?

Yes, the repetitive avalanche energy is 4 mJ and single pulse avalanche energy is 425 mJ.

APT1003RSFLLGAPT1003RSFLLG
$10.17
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