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APT10043JVR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1000V 22A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10043JVR
- Description：MOSFET N-CH 1000V 22A ISOTOP
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：430mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：480 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：9000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT10043JVR
Single FETs, MOSFETs Overview
The APT10043JVR is a high-voltage N-Channel enhancement mode power MOSFET belonging to the Power MOS V series. It utilizes advanced silicon technology designed to minimize the JFET effect and reduce on-resistance while increasing packing density. The device features an optimized gate layout that enables faster switching speeds and lower leakage currents. It is manufactured in a popular SOT-227 package, suitable for board-mount applications requiring robust performance.
Single FETs, MOSFETs Feature Summary
- Power MOS V technology minimizes JFET effect and reduces on-resistance
- Optimized gate layout achieves faster switching speeds
- Lower leakage current characteristics
- 100% avalanche tested for reliability
Single FETs, MOSFETs Applications
- High voltage power switching circuits
- Industrial motor control systems
- Power supply modules
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized Microsemi or Advanced Power Technology channels. Confirm package integrity and marking accuracy upon receipt. Ensure storage conditions comply with semiconductor handling standards to prevent moisture damage or electrostatic discharge prior to soldering.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage N-Channel switching with enhanced thermal and electrical efficiency. The Power MOS V architecture offers superior on-resistance compared to standard counterparts. Consider the SOT-227 package constraints for thermal management and PCB layout requirements during design integration.
Single FETs, MOSFETs Part Context
This part is part of the Power MOS V family, representing a generation of high-voltage N-Channel enhancement mode power MOSFETs. The series focuses on improving packing density and reducing parasitic effects. It serves as a discrete semiconductor solution for power electronics, distinct from integrated circuits or passive components.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other devices in the Power MOS V series such as APT10040B2VFR or APT10050JVFR if voltage ratings differ. Verify pinout compatibility and thermal resistance specifications before substituting with generic equivalents.
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