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APT10045B2LLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 23A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10045B2LLG
- Description：MOSFET N-CH 1000V 23A T-MAX
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：450mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：154 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：4350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：565W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™ [B2]
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT10045B2LLG
Single FETs, MOSFETs Overview
The APT10045B2LLG is a single N-channel enhancement mode power MOSFET from the POWER MOS 7 series, manufactured by Microchip Technology. It utilizes Silicon technology and features an ISOTOP package configuration within a SOT-227-4 housing. The device supports screw mount installation and operates with a drain-source voltage of 1 kV. It provides a continuous drain current of 21 A and maintains a maximum on-resistance of 450 mOhms. Power dissipation reaches 460 W, while the operating temperature range spans from -55 C to +150 C.
Single FETs, MOSFETs Feature Summary
- POWER MOS 7 technology reduces both conduction and switching losses through lowered Rds(on) and gate charge.
- Patented metal gate structure enables exceptionally fast switching speeds.
- ISOTOP package design facilitates efficient thermal management for high-power applications.
Single FETs, MOSFETs Applications
- High-voltage DC-DC converters
- Motor control systems
- Industrial power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official documentation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure the ordering part number matches the required pinout and thermal characteristics for the target application.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high-voltage handling with optimized switching performance. The POWER MOS 7 architecture offers improved efficiency compared to previous generations. Evaluate thermal requirements carefully due to the high power dissipation capabilities inherent in the ISOTOP package design.
Single FETs, MOSFETs Part Context
This device belongs to the POWER MOS 7 family, representing a generation of low-loss, high-voltage N-channel enhancement mode power MOSFETs. The series focuses on minimizing both conduction and switching losses simultaneously. This specific model integrates these advanced semiconductor technologies into a robust industrial-grade package suitable for demanding power electronics environments.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify that any substitute maintains identical voltage ratings, current capacity, and package dimensions to ensure mechanical and electrical compatibility without redesigning the circuit board.
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