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APT10050B2VFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 21A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10050B2VFRG
- Description：MOSFET N-CH 1000V 21A T-MAX
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：500mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：500 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：7900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™ [B2]
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT10050B2VFRG
Single FETs, MOSFETs Overview
The APT10050B2VFRG is a silicon N-channel Power MOS V® Fast Recovery Epitaxial Diode (FRED) MOSFET manufactured by Microchip Technology. It features a 1000 V drain-source voltage rating and a maximum on-resistance of 500 mΩ at 10 V gate drive. The device is housed in a TO-247 package, designed for high-voltage switching applications requiring fast recovery characteristics.
Single FETs, MOSFETs Feature Summary
- Integrated fast recovery epitaxial diode for efficient commutation
- High voltage capability suitable for demanding power circuits
- Optimized low on-resistance for reduced conduction losses
Single FETs, MOSFETs Applications
- High-frequency power supplies
- Motor control inverters
- Uninterruptible power systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'VFRG' against the official Microchip datasheet to confirm package type and tape-and-reel specifications. Ensure the component matches the required thermal management capabilities for the intended operating temperature range. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.
Single FETs, MOSFETs Selection Notes
Select this component when a 1000 V rating is required alongside fast recovery diode integration. Compare the 500 mΩ on-resistance against system efficiency targets. Consider the TO-247 package constraints for board layout and heat dissipation requirements relative to similar devices in the Power MOS V® series.
Single FETs, MOSFETs Part Context
This device belongs to the Microchip Power MOS V® family, which combines MOSFET and FRED technologies. It is distinct from standard MOSFETs by its integrated diode, offering a compact solution for hard-switching applications. The TO-247 form factor provides robust mechanical stability for industrial environments.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent 1000 V FRED MOSFETs. Verify pin compatibility and electrical parameters before replacing with other manufacturers' parts.
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