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APT10050LVFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 21A TO264. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10050LVFRG
- Description：MOSFET N-CH 1000V 21A TO264
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：500mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：500 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：7900 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-264 [L]
- Package / Case：TO-264-3, TO-264AA
Single FETs, MOSFETs datasheet and documents for APT10050LVFRG
Single FETs, MOSFETs Overview
The APT10050LVFRG is a single N-channel silicon MOSFET from Microchip Technology, housed in a TO-264-3 (ISOTOP) through-hole package. It features a 1 kV drain-source breakdown voltage and a continuous drain current of 21 A. The device exhibits a maximum on-resistance of 500 mOhms at 10 V gate drive, with a gate charge of 500 nC. It supports a power dissipation of 520 W and operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Utilizes ISOTOP® base-mount packaging for efficient thermal management and robust mechanical stability.
- Incorporates Fast Recovery Epitaxial Diode (FREDFET) technology for optimized switching performance.
- Features enhancement-mode N-channel operation with high voltage blocking capability.
Single FETs, MOSFETs Applications
- High-voltage industrial motor drives
- Power supply circuits requiring fast recovery characteristics
- Isolated DC-DC converter topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'FR' indicates the integrated freewheeling diode configuration as documented in official datasheets. Confirm that the TO-264-3 footprint matches the target PCB layout requirements. Ensure thermal interface materials are compatible with the ISOTOP base plate design for optimal heat transfer. Cross-reference the manufacturer part number against current product lifecycle status to confirm availability and manufacturing continuity.
Single FETs, MOSFETs Selection Notes
Select this component when a 1 kV rating and 21 A continuous current capacity are required in a through-hole form factor. The 500 mOhm on-resistance offers a balance between conduction losses and cost for medium-power applications. Consider the 500 nC gate charge for driver capability assessment. The wide operating temperature range supports demanding environmental conditions without derating constraints typical of lower-grade devices.
Single FETs, MOSFETs Part Context
This device belongs to the POWER MOS V® series by Microchip Technology, designed for general-purpose power switching. The APT10050LVFRG represents a legacy integration combining MOSFET and diode technologies in a single package. It serves as a discrete solution for applications where space efficiency and switching speed are prioritized over purely low-on-resistance metrics found in newer planar technologies.
Single FETs, MOSFETs Replacement Considerations
APT10050JVFR: Alternative ISOTOP package variant with similar electrical specifications but potentially different pinout or thermal characteristics; verify mechanical compatibility before substitution.
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