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APT10090BLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 12A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10090BLLG
- Description：MOSFET N-CH 1000V 12A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1000 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：950mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1969 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：298W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT10090BLLG
Single FETs, MOSFETs Overview
The APT10090BLLG is an N-channel Power MOS 8™ MOSFET designed for high-voltage switching applications. It features a 1000V drain-source voltage rating and a continuous drain current of 12A at case temperature. The device is housed in a TO-247-3 through-hole package, suitable for thermal management up to 298W. It operates within a junction temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- High-speed switching capability with low electromagnetic interference (EMI) characteristics
- Robust high-voltage N-channel construction for reliable power control
- Through-hole mounting design optimized for industrial thermal dissipation
Single FETs, MOSFETs Applications
- Switch-mode power supplies requiring high voltage isolation
- Industrial motor drive circuits
- High-frequency inverter topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix LLG against official Microchip documentation to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid traceability for this active component. Cross-reference the datasheet revision date to guarantee compatibility with current design specifications before finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring 1000V blocking capability with moderate current handling. The TO-247 package facilitates efficient heat sinking for high-power density designs. Evaluate thermal resistance requirements against the 12A continuous current rating to ensure adequate cooling solutions are integrated into the system architecture.
Single FETs, MOSFETs Part Context
This part belongs to the Microchip Power MOS 8™ family, which specializes in high-voltage N-channel transistors. The series targets applications demanding fast switching speeds and reduced EMI. The APT10090BLLG represents a standard through-hole variant within this portfolio, balancing performance with robust mechanical packaging for industrial environments.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for equivalent N-channel MOSFETs with matching 1000V ratings. Verify that alternative packages maintain compatible thermal and pin configurations. Ensure any substitute meets the same switching speed and EMI performance criteria defined in the original datasheet.
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