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The APT100GLQ65JU2 is a single IGBT module manufactured by Microchip Technology under the ISOTOP trademark. It utilizes silicon technology and features an SOT-227-4 package with screw mount installation style. The device supports a collector-emitter maximum voltage (VCEO) of 650 V and a continuous collector current of 165 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V, a gate-emitter leakage current of 150 nA, and a power dissipation rating of 430 W. The maximum gate-emitter voltage is specified as 20 V. The component operates within a temperature range from -55°C to +150°C and weighs approximately 30 g.
Verify the specific ordering suffix against official Microchip documentation to ensure correct pinout and thermal interface specifications. Confirm RoHS compliance status through the manufacturer's latest product change notifications or datasheet revisions prior to finalizing procurement orders.
Select this component based on its 650 V blocking capability and 165 A current handling capacity. Ensure the application design accommodates the 430 W power dissipation requirement and that the cooling solution maintains junction temperatures within the -55°C to +150°C operational range for reliable performance.
This part belongs to the Microchip APT series of insulated gate bipolar transistors. It is categorized under IGBT modules and serves as a discrete power switching element. The SOT-227-4 package is standard for this family, facilitating direct heatsink mounting in power electronic assemblies.
Consult official Microchip substitution guides for verified equivalents. Cross-reference key parameters such as VCEO, IC, and package type when evaluating alternative components.