APT100GN120B2G

$25.04

Description：IGBT TRENCH FIELD STP 1200V 245A
Series：-

SKU:f522e63c6d53 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FIELD STP 1200V 245A
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：245 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 100A
Power - Max：960 W
Switching Energy：11mJ (on), 9.5mJ (off)
Input Type：Standard
Gate Charge：540 nC
Td (on/off) @ 25°C：50ns/615ns
Test Condition：800V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：-
Grade：-
Qualification：-

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APT100GN120B2G

Overview

The APT100GN120B2G is a single IGBT module from Microchip Technology, utilizing Field Stop technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a typical collector-emitter saturation voltage (VCE(sat)) of 1.7 V at 25°C. The device supports a continuous collector current of 120 A at Tc=86°C and 95 A at Tc=110°C. It operates within a junction temperature range of -55°C to +150°C and is housed in a T-MAX package style.

Feature Summary

Field Stop trench gate architecture for lowest conduction loss
Short circuit rated capability with easy paralleling support
Co-packaged with high-speed DQ diode

Applications

High-power density Switch Mode Power Supply (SMPS)
Industrial motor drives
Inverter systems

Procurement Notes

Verify the specific datasheet for the APT100GN120B2G as it may share characteristics with similar part numbers like APT100GN120B2 or APT100GN120JDQ4. Confirm thermal resistance values and pinout compatibility before integration. Ensure ordering suffixes match exact mechanical and electrical requirements.

Selection Notes

Select this component for applications requiring low conduction losses and robust short-circuit performance. The Field Stop technology offers efficiency benefits over NPT types. Verify that the T-MAX package fits the thermal management design constraints and that the 1.2 kV rating aligns with the system bus voltage.

Part Context

This device belongs to Microchip's Power MOS 8™ IGBT portfolio, specifically the Field Stop series. It represents an evolution in high-voltage power discretes designed for superior switching performance and reliability compared to previous generation PT or NPT technologies.