APT100GN120JDQ4

$47.29

Description：IGBT MOD 1200V 153A 446W ISOTOP
Series：-

SKU:12bc047a4c0f Category: IGBT Modules Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 153A 446W ISOTOP
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：Trench Field Stop
Configuration：Single
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 100A
Input：Standard
NTC Thermistor：No
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-227-4, miniBLOC
Supplier Device Package：ISOTOP®
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：153 A
Power - Max：446 W
Current - Collector Cutoff (Max)：200 µA
Input Capacitance (Cies) @ Vce：6.5 nF @ 25 V

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APT100GN120JDQ4

Overview

The APT100GN120JDQ4 is a single IGBT module with an integrated anti-parallel diode, manufactured by Microchip Technology. It utilizes Field Stop and Trench Gate technologies to achieve low conduction losses. The device features a collector-emitter voltage of 1200 V and a typical on-state voltage of 1.7 V at 100 A. Continuous collector current reaches 153 A at 25°C case temperature. Total power dissipation is rated at 446 W. The component operates within a junction temperature range of -55°C to +150°C and is housed in an ISOTOP-4 (SOT-227) package.

Feature Summary

Field Stop and Trench Gate technology for ultra-low VCE(ON)
Integrated gate resistor for reliable operation and low EMI
Tight parameter distribution facilitating easy paralleling
Low gate charge simplifying drive design

Applications

Welding equipment
Inductive heating systems
Solar inverters
Motor drives
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical characteristics and packaging details. Confirm RoHS compliance status through the latest datasheet revision. Ensure proper electrostatic discharge handling procedures are followed during storage and installation due to component sensitivity.

Selection Notes

Select this module for applications requiring low frequency operation with minimal conduction loss. The integrated gate resistor reduces external component count and improves short-circuit fault tolerance. Verify thermal management requirements against the specified junction-to-case thermal resistance values for both the IGBT and diode sections under expected operating conditions.

Part Context

This component belongs to the Microchip Technology IGBT module family utilizing Field Stop technology. It is designed as a Combi device, combining an IGBT and a fast recovery anti-parallel diode in a single package. The ISOTOP-4 package provides robust mechanical mounting and efficient thermal transfer capabilities for high-power industrial applications.

Replacement Considerations

Direct replacements must match the 1200V rating, 100A+ current capacity, and SOT-227/ISOTOP-4 footprint. Verify that any substitute maintains similar VCE(ON) characteristics and includes an integrated gate resistor if EMI reduction is critical. Check thermal impedance curves for equivalent heat dissipation performance.

FAQ

What is the purpose of the integrated gate resistor?

The integrated gate resistor ensures extremely reliable operation, even during short circuit faults, and helps minimize electromagnetic interference (EMI).