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The APT100GT120JU3 is a single IGBT module manufactured by Microchip Technology, utilizing Silicon Carbide (SiC) technology. It features an ISOTOP-4 package with screw mount installation style. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 140 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V, gate-emitter leakage current of 400 nA, and power dissipation of 480 W. The operating temperature range spans from -55°C to +150°C, with a maximum gate-emitter voltage of 20 V.
Verify component authenticity through authorized Microchip Technology distributors or certified supply chain partners. Confirm RoHS compliance status via official datasheets before integration. Ensure storage conditions align with manufacturer specifications to maintain device integrity. Validate part markings against official documentation to prevent counterfeit substitution during procurement processes.
Select this module when designing circuits requiring 1.2 kV blocking capability with 140 A continuous current handling in a compact form factor. The ISOTOP-4 package suits applications needing robust thermal dissipation without excessive board space. Consider the 1.7 V saturation voltage for minimizing conduction losses in high-current paths compared to standard silicon alternatives.
This component belongs to the APT series of IGBT modules produced by Microchip Technology. It represents a specific variant within the PM-IGBT-TFS-SOT227 product line, distinguished by its SiC construction and single-chip configuration. The model differentiates itself from similar parts through its specific current rating and package type.
Direct substitutes may include other Microchip APT series modules with matching 1.2 kV ratings and ISOTOP-4 packaging, such as APT75GT120JU3 for lower current needs or APT100GT120JRDQ4 for alternative pinout configurations. Verify thermal resistance and gate drive compatibility before swapping.