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Product Detailed Parameters
- Description：IGBT 600V 183A 780W TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：183 A
- Current - Collector Pulsed (Icm)：307 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 62A
- Power - Max：780 W
- Switching Energy：1.354mJ (on), 1.614mJ (off)
- Input Type：Standard
- Gate Charge：294 nC
- Td (on/off) @ 25°C：28ns/212ns
- Test Condition：400V, 62A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT102GA60B2 is a single Insulated Gate Bipolar Transistor (IGBT) from Microchip Technology's POWER MOS 8 series. It utilizes Planar Trench Field-Stop technology for optimized performance. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 102 A at 25°C. It operates within a junction temperature range of -55°C to +150°C. The component is housed in a TO-247 package, suitable for through-hole mounting.
Feature Summary
- POWER MOS 8™ technology providing low conduction losses and fast switching capabilities
- Planar Trench Field-Stop structure designed for high efficiency and reliability
- Robust short-circuit withstand capability for protection in demanding applications
Applications
- Motor drives and inverters
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides valid traceability records. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to finalizing orders.
Selection Notes
Select this component based on the required 600 V blocking voltage and 102 A current handling capacity. Evaluate the thermal resistance parameters relative to the intended heatsinking solution. Consider the gate charge specifications when designing the driver circuitry to ensure optimal switching speeds and minimize power dissipation during transitions.
Part Context
This IGBT belongs to the APT102GA60 family, which shares similar electrical ratings but may differ in packaging or minor internal optimizations. The 'B2' suffix typically denotes specific manufacturing revisions or enhanced reliability standards within the POWER MOS 8 lineup. It serves as a high-power switching element in industrial electronics.
Replacement Considerations
Direct replacements include the APT102GA60L, which offers identical electrical specifications but utilizes a TO-264 package instead of TO-247. Verify mechanical footprint compatibility before substitution. Other family members like APT68GA60B share the same technology but feature lower current ratings.
