APT10M09B2VFRG

$12.21

Description：MOSFET N-CH 100V 100A T-MAX
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube

SKU:ded4c2c3bb65 Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT10M09B2VFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 100V 100A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT10M09B2VFRG

Description：MOSFET N-CH 100V 100A T-MAX
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：350 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：9875 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：625W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：T-MAX™ [B2]
Package / Case：TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT10M09B2VFRG

APT10M09B2VFRG

Single FETs, MOSFETs Overview

The APT10M09B2VFRG is a Power MOS V® N-Channel enhancement mode power MOSFET manufactured by Microsemi. It features a T-MAX™ (TO-264) package and operates with a drain-source breakdown voltage of 100V. The device supports a continuous drain current of 100A at 25°C case temperature and delivers a maximum on-state resistance of 0.009Ω at VGS=10V. It includes a fast recovery body diode rated for 100A continuous source current. Thermal characteristics include a junction-to-case resistance of 0.20°C/W, allowing operation within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Power MOS V® technology minimizes the JFET effect and reduces on-resistance through optimized gate layout.
Integrated fast recovery body diode designed for high-speed switching applications.
T-MAX™ package provides robust thermal performance and mechanical stability.
Device is avalanche energy rated for repetitive and non-repetitive conditions.

Single FETs, MOSFETs Applications

High-frequency DC-DC converters
Motor control circuits
Power factor correction stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm the exact package variant. Confirm RoHS compliance status as specifications may vary by production batch. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly due to device sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in 100V applications. The T-MAX™ package offers superior heat dissipation compared to standard TO-247 variants. Evaluate the total gate charge requirements against the driving circuit capabilities to ensure optimal switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the Advanced Power Technology (APT) Power MOS V® family, now under Microsemi. The series focuses on high-voltage silicon MOSFETs that balance low on-resistance with fast switching characteristics. The T-MAX™ package distinguishes it from standard through-hole alternatives by offering enhanced mounting options.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same Power MOS V® family or equivalent 100V/100A devices from other manufacturers. Verify pinout compatibility and thermal resistance values before substitution.