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APT10M11JVR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 100V 144A ISOTOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT10M11JVR
- Description：MOSFET N-CH 100V 144A ISOTOP
- Series：POWER MOS V®
- Mfr：Microsemi Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：144A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：450 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：10300 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：450W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Supplier Device Package：ISOTOP®
- Package / Case：SOT-227-4, miniBLOC
Single FETs, MOSFETs datasheet and documents for APT10M11JVR
Single FETs, MOSFETs Overview
The APT10M11JVR is a single N-channel enhancement mode power MOSFET from the POWER MOS V® series, manufactured by Microsemi Corporation. It utilizes silicon technology and features an ISOTOP® (SOT-227) package designed for screw mounting. The device provides a drain-source breakdown voltage of 100V and supports a continuous drain current of 144A at 25°C case temperature. Its maximum on-state resistance is 0.011Ω. The component operates within a junction temperature range of -55°C to +150°C and offers a total power dissipation capability of 450W.
Single FETs, MOSFETs Feature Summary
- POWER MOS V® technology minimizes JFET effects and reduces on-resistance through optimized gate layout.
- ISOTOP® SOT-227 package design facilitates efficient thermal management via direct baseplate contact.
- Device undergoes 100% avalanche testing to ensure reliability under transient conditions.
Single FETs, MOSFETs Applications
- High-frequency switching power supplies
- DC-to-AC motor drives
- Isolated power conversion circuits
Single FETs, MOSFETs Procurement Notes
Verify that the specific ordering suffix matches the required configuration, as variations may exist. Confirm RoHS compliance status directly with the manufacturer or authorized distributor documentation. Ensure handling procedures account for electrostatic discharge sensitivity during installation and storage.
Single FETs, MOSFETs Selection Notes
Select this component when low on-resistance and high current capacity are required in a flange-mountable package. Evaluate the thermal impedance characteristics against the application's heat sinking capabilities. Consider the 100V rating and 144A current limits relative to the system's peak operational demands.
Single FETs, MOSFETs Part Context
This part belongs to the POWER MOS V® family of high-voltage N-channel enhancement mode MOSFETs. The series emphasizes reduced packing density and faster switching speeds compared to previous generations. The ISOTOP® package variant is specifically engineered for applications requiring robust mechanical mounting and superior thermal performance.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other APT10M11 variants or similar 100V/144A ISOTOP devices. Verify pinout compatibility and thermal interface dimensions before substitution. Check datasheet updates for any changes in electrical parameters or package specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
