APT10M11JVRU2

$23.41

Description：MOSFET N-CH 100V 142A SOT227
Series：-
Mfr：Microchip Technology
Package：Bulk

SKU:6f19d4d73d5e Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT10M11JVRU2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 100V 142A SOT227. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT10M11JVRU2

Description：MOSFET N-CH 100V 142A SOT227
Series：-
Mfr：Microchip Technology
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：142A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id：4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：300 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：8600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：450W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT10M11JVRU2

APT10M11JVRU2

Single FETs, MOSFETs Overview

The APT10M11JVRU2 is a single N-channel Power MOSFET module manufactured by Microchip Technology. It utilizes the ISOTOP SOT-227 package and silicon technology. Key electrical parameters include a drain-source breakdown voltage of 100 V, a continuous drain current of 142 A at 25°C case temperature, and a maximum on-resistance of 11 mΩ. The device supports a gate-source voltage range of ±30 V and dissipates up to 450 W of power. It features an integrated chopper diode with a forward current rating of 30 A average.

Single FETs, MOSFETs Feature Summary

ISOTOP package design providing direct heatsink mounting capability with electrical isolation
Power MOS V technology ensuring low input capacitance and fast intrinsic diode performance
Rugged construction rated for repetitive avalanche energy applications
Low stray inductance structure optimized for high-frequency switching operations

Single FETs, MOSFETs Applications

AC and DC motor control systems
Switched Mode Power Supplies (SMPS)
Power Factor Correction circuits
Brake switch implementations

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Microchip distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly. Validate thermal management requirements against the specified junction-to-case resistance values.

Single FETs, MOSFETs Selection Notes

Select this module for applications requiring high current handling within a 100 V system. The isolated package simplifies thermal management by allowing direct mounting to heatsinks without additional insulators. Consider the specific gate charge and threshold voltage requirements for driver compatibility. Evaluate the pulsed drain current capabilities against peak load demands.

Single FETs, MOSFETs Part Context

This component belongs to the Microchip Power MOS V series utilizing the ISOTOP family of packages. It represents a discrete power solution designed for robust industrial environments. The product line emphasizes high integration levels and ruggedness compared to standard surface-mount alternatives.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other APT series modules such as APT20M11JVFR or APT30M19JVFR for different voltage ratings. Verify pinout compatibility and thermal characteristics when substituting similar ISOTOP packaged devices.