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Product Detailed Parameters
- Description：IGBT NPT 1200V 25A TO220
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：44 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 8A
- Power - Max：156 W
- Switching Energy：300µJ (on), 285µJ (off)
- Input Type：Standard
- Gate Charge：65 nC
- Td (on/off) @ 25°C：7ns/100ns
- Test Condition：800V, 8A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220 [K]
- Grade：-
- Qualification：-
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Overview
The APT11GF120KRG is a single-channel, Non-Punch Through (NPT) Fast IGBT with an integrated Ultra Fast Recovery Epi-axial Diode (FRED). It features a TO-220 package and supports a collector-emitter breakdown voltage of 1200 V. The device handles a continuous collector current of 400 A at 25°C case temperature, with a maximum pulsed current of 2000 A. Total power dissipation reaches 156 W. Key electrical parameters include a gate threshold voltage of 4.5 to 6.5 V, a typical on-state voltage of 3.0 V at 8 A, and a total gate charge of 65 nC.
Feature Summary
- Integrates a Fast IGBT with an ultrafast soft recovery anti-parallel diode for superior ruggedness.
- Utilizes Non-Punch Through technology to achieve high-frequency switching capabilities up to 20 kHz.
- Rated for repetitive Switching Safe Operating Area (RBSOA) and Short Circuit Safe Operating Area (SCSOA).
- Features ultra-low leakage current characteristics across operating temperatures.
Applications
- High-frequency inductive switching circuits
- Power conversion systems requiring fast recovery diodes
- Industrial motor drives
Procurement Notes
Verify the component against the official Microsemi/APT datasheet revision C (052-6213 Rev C 1-2006). Confirm that the suffix 'G' indicates RoHS compliance and lead-free terminal finish as documented. Ensure the TO-220 package outline matches the specified mechanical dimensions before integration.
Selection Notes
Select this component for applications demanding high-speed switching and robust short-circuit withstand capability. Evaluate thermal management requirements based on the 156 W total power dissipation limit and junction-to-case thermal resistance. Verify that the gate drive voltage aligns with the specified 15 V operating condition for optimal performance.
Part Context
This part belongs to the Fast IGBT series manufactured by Advanced Power Technology (APT), now part of Microsemi Corporation. It combines NPT IGBT technology with FRED diodes to provide enhanced switching speed and reliability compared to standard IGBT modules.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 1200V rating, 400A continuous current, TO-220 package, and NPT technology specifications from other manufacturers.
FAQ
What does the 'G' suffix denote in the part number APT11GF120KRG?
The 'G' suffix denotes that the device is RoHS compliant and features a lead-free terminal finish.
What is the maximum pulsed collector current for this device?
The maximum pulsed collector current is 2000 A.
How is the turn-on switching energy defined in the datasheet?
Eon1 is defined as the clamped inductive turn-on energy of the IGBT only, without the effect of commutating diode reverse recovery current. Eon2 includes the reverse recovery current effect.
