APT11N80BC3G

Single FETs, MOSFETs Overview

The APT11N80BC3G is an N-Channel Power MOSFET utilizing CoolMOS Superjunction technology, manufactured by Microchip Technology. It features a maximum drain-source breakdown voltage of 800 V and a continuous drain current rating of 11 A at case temperature. The device exhibits a maximum on-state resistance of 450 mΩ. Packaged in a TO-247 through-hole housing, it supports a power dissipation of 156 W under thermal case conditions.

Single FETs, MOSFETs Feature Summary

• Employs CoolMOS Superjunction technology for optimized high-voltage performance
• Designed for efficient switching in high-voltage power applications
• Utilizes TO-247 through-hole package for robust thermal management

Single FETs, MOSFETs Applications

• High-voltage power supply circuits
• Industrial motor control systems
• Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'BC3G' against official Microchip documentation to confirm pinout configuration and RoHS compliance status. Ensure the TO-247 package dimensions match your PCB footprint requirements. Cross-reference the 450 mΩ Rds(on) maximum limit with your circuit's conduction loss calculations to ensure adequate thermal headroom under operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating is required for high-side or low-side switching applications. The 11 A continuous current capability suits moderate-power designs. Consider the TO-247 package for applications requiring direct heatsink mounting. Evaluate the 450 mΩ on-resistance against efficiency targets compared to lower-voltage alternatives if system voltage permits.

Single FETs, MOSFETs Part Context

This part belongs to Microchip's CoolMOS family, which integrates superjunction structures to reduce charge and resistance. The APT series typically denotes automotive-grade or ruggedized variants within the portfolio. The TO-247 form factor provides a balance between current handling capacity and mechanical stability for industrial environments.

Single FETs, MOSFETs Replacement Considerations

Consult Microchip datasheets for direct equivalents within the APT series. Verify that any substitute maintains the 800 V rating and compatible TO-247 pinout. Check for identical thermal characteristics and gate charge specifications to ensure circuit stability without redesign.