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APT1201R6BVFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 8A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT1201R6BVFRG
- Description：MOSFET N-CH 1200V 8A TO247
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：230 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：3660 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT1201R6BVFRG
Single FETs, MOSFETs Overview
The APT1201R6BVFRG is an N-channel FREDFET MOSFET manufactured by Microchip Technology. It features a maximum drain-source voltage of 1200 V and a continuous drain current of 8 A at case temperature. The device has a maximum on-state resistance of 1.6 Ohms and a power dissipation rating of 280 W. It is housed in a TO-247 package with three pins and a tab, designed for through-hole mounting.
Single FETs, MOSFETs Feature Summary
- Utilizes FREDFET technology for fast recovery performance
- Enhancement mode channel operation
- High voltage capability suitable for demanding switching applications
Single FETs, MOSFETs Applications
- Industrial automation systems
- Process automation high-power modules
- General purpose high-voltage switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffixes to ensure correct packaging and specifications. Confirm RoHS compliance status through official Microchip documentation or authorized distributor datasheets before procurement. Ensure thermal management solutions align with the specified power dissipation ratings for reliable operation.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high blocking voltage and moderate current handling in a standard through-hole package. Consider the on-resistance and thermal characteristics when designing heat sinking requirements. Verify that the gate drive requirements match the enhancement mode characteristics for optimal switching performance.
Single FETs, MOSFETs Part Context
This device belongs to Microchip's FREDFET family, which integrates Fast Recovery Epitaxial Diode technology within MOSFET structures. This integration aims to improve efficiency in hard-switching applications by reducing reverse recovery losses compared to standard MOSFETs with external diodes.
Single FETs, MOSFETs Replacement Considerations
Consult official Microchip substitution guides for verified alternatives. Cross-reference key parameters such as voltage rating, current capacity, and package type when evaluating potential replacements from other manufacturers.
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