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APT12060LVFRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 20A TO264. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT12060LVFRG
- Description：MOSFET N-CH 1200V 20A TO264
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：600mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：650 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：9500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-264 [L]
- Package / Case：TO-264-3, TO-264AA
Single FETs, MOSFETs datasheet and documents for APT12060LVFRG
Single FETs, MOSFETs Overview
APT12060LVFRG is a high-voltage N-channel enhancement mode power MOSFET from the Power MOS V series. It features a T-MAX TO-264 package with specifications of 1200V drain-source voltage, 20A continuous drain current, and 0.600 Ohms on-resistance. The device operates between -55°C and +150°C junction temperature.
Single FETs, MOSFETs Feature Summary
- Optimized gate layout for faster switching speeds
- Minimizes JFET effect to increase packing density
- Reduces on-resistance through advanced technology
Single FETs, MOSFETs Applications
- High voltage power switching applications
- Industrial motor control systems
- Power supply designs requiring low leakage
Single FETs, MOSFETs Procurement Notes
Verify the exact suffix against official Microchip documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the datasheet revision date to ensure compatibility with current design requirements.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring 1200V blocking capability with moderate current handling. The TO-264 package suits applications needing robust thermal dissipation. Compare on-resistance values against similar voltage ratings to optimize efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the Power MOS V family, representing a generation of high-voltage N-channel enhancement mode devices. The series focuses on minimizing the JFET effect and reducing on-resistance while achieving faster switching through optimized gate layouts.
Single FETs, MOSFETs Replacement Considerations
Check for identical specifications in the T-MAX package variant. Verify that any substitute maintains the same 1200V rating and 0.600 Ohm resistance within the TO-264 form factor.
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